Part # RFP22N10 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: RFP22N10, RF1S22N10SM 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs

Part Details:

RFP22N10, RF1S22N10SM Data Sheet January 2002 File Number 2385.3 22A, 100V, 0.080 Ohm, N-Channel Power Features MOSFETs · 22A, 100V These N-Channel power MOSFETs are manufactured using · rDS(ON) = 0.080 the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives · UIS SOA Rating Curve (Single Pulse) optimum utilization of silicon, resulting in outstanding · SOA is Power Dissipation Limited performance. They were designed for use in applications such as switching regulators, switching converters, motor · Nanosecond Switching Speeds drivers, and relay drivers. These transistors can be operated · Linear Transfer Characteristics directly from integrated circuits. · High Input Impedance Formerly developmental type TA9845. · 175oC Operating Temperature Ordering Information · Related Literature - TB334 "Guidelines for Soldering Surface Mount PART NUMBER PACKAGE BRAND Components to PC Boards" RFP22N10 TO-220AB RFP22N10 Symbol RF1S22N10SM TO-263AB F1S22N10 D NOTE: When ordering use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, e.g. RF1S22N10SM9A. G S Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN DRAIN (FLANGE) GATE (FLANGE) SOURCE ©2002 Fairchild Semiconductor Corporation

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RFP22N10.pdf Datasheet