Part # FDC604P datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDC604P P-Channel 1.8V Specified PowerTrench MOSF


Part Details:

FDC60 January 2001 4P FDC604PP-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses · ­5.5 A, ­20 V. R Fairchild s low voltage PowerTrench process. It has DS(ON) = 33 m @ VGS = ­4.5 V been optimized for battery power management RDS(ON) = 43 m @ VGS = ­2.5 V applications. RDS(ON) = 60 m @ VGS = ­1.8 V Applications · Fast switching speed. · Battery management · High performance trench technology for extremely · Load switch low RDS(ON) · Battery protection S D D 1 6 2 5 G D 3 4 TM D SuperSOT -6 Absolute Maximum Ratings TA=25oC unless otherwise notedSymbol Parameter Ratings Units VDSS Drain-Source Voltage ­20 V VGSS Gate-Source Voltage ±8 V ID Drain Current ­ Continuous (Note 1a) ­5.5 A ­ Pulsed


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FDC604P.pdf Datasheet