Part # FDP52N20 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDP52N20 FDPF52N20T N-Channel MOSF

Part Details:

FDP52N October 2007 UniFETTM 20 / FD FDP52N20 / FDPF52N20T tm N-Channel MOSFET200V, 52A, 0.049 PF52N Features Description · RDS(on) = 0.041 ( Typ.)@ VGS = 10V, ID = 26A These N-Channel enhancement mode power field effect transis- 20T N-Channel MOSFET tors are produced using Fairchild s proprietary, planar stripe, · Low gate charge ( Typ. 49nC) DMOS technology. · Low Crss ( Typ. 66pF) This advance technology has been especially tailored to mini- · Fast switching mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and · 100% avalanche tested commutation mode. These devices are well suited for high effi-cient switching mode power supplies and active power factor · Improve dv/dt capability correction. · RoHS compliant D G TO-220 TO-220F G D S FDP Series G D S FDPF Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol Parameter FDP52N20 FDPF52N20T Units VDSS Drain to Source Voltage 200 V VGSS Gate to Source Voltage ±30 V -Continuous (T I C = 25oC) 52 52* D Drain Current

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FDP52N20.pdf Datasheet