Part # NZT605 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: NZT605

Part Details:

NZT 605 NP January 2007 NZT605 N Darlington T NPN Darlington Transistor · This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. · Sourced from process 06. ransistor 4 3 2 1 SOT-223 1. Base 2.4. Collector 3. Emitter Absolute Maximum Ratings * TC = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 110 V VCBO Collector-Base Voltage 140 V VEBO Emitter-Base Voltage 10 V IC Collector Current - Continuous 1.5 A TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1. These ratings are based on a maximum junction temperature of 150 degrees C.2. These are steady limits. The factory should be consulted on application involving pulsed or low duty cycle operations Electrical Characteristics * TC = 25°C unless otherwise noted Symbol Parameter Conditions Min. Max Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 110 V

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NZT605.pdf Datasheet