Part # FDG6317NZ datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDG6317NZ Dual 20v N-Channel PowerTrench MOSF

Part Details:

FDG63 January 2004 17N FDG6317NZ Z Dual 20v N-Channel PowerTrench® MOSFET General Description Features This dual N-Channel MOSFET has been designed · 0.7 A, 20 V. R specifically to improve the overall efficiency of DC/DC DS(ON) = 400 m @ VGS = 4.5 V converters using either synchronous or conventional RDS(ON) = 550 m @ VGS = 2.5 V switching PWM controllers. It has been optimized use · ESD protection diode (note 3) in small switching regulators, providing an extremelylow RDS(ON) and gate charge (QG) in a small package. · Low gate charge Applications · High performance trench technology for extremely low R · DS(ON) DC/DC converter · Power management · Compact industry standard SC70-6 surface mount · Loadswitch package S G D D G Pin 1 S SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Absolute Maximum Ratings TA=25oC unless otherwise notedSymbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ± 12 V ID Drain Current ­ Continuous (Note 1) 0.7 A

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FDG6317NZ.pdf Datasheet