Part # IRFS640B datasheet

Part Manufacturer: Motorola


Part Description: RF640B IRFS640B 200V N-Channel MOSF

Part Details:

IRF November 2001 640B/I RF IRF640B/IRFS640B S640B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 18A, 200V, RDS(on) = 0.18 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 45 nC) planar, DMOS technology. · Low Crss ( typical 45 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for high efficiency switching DC/DC converters,switch mode power supplies, DC-AC converters foruninterrupted power supply and motor control. D G TO-220 TO-220F G D S IRF Series G D S IRFS Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter IRF640B IRFS640B Units VDSS Drain-Source Voltage 200 V ID Drain Current - Continuous (TC = 25°C) 18 18 * A - Continuous (TC = 100°C) 11.4 11.4 * A IDM Drain Current - Pulsed (Note 1)

Please click the following link to download the datasheet:

IRFS640B.pdf Datasheet