Part # KSB601 datasheet

Part Manufacturer: Motorola


Part Description: KSB601 PNP Epitaxial Silicon Darlington Transistor

Part Details:

KSB601 KSB601 Low Frequency Power Amplifier· Medium Speed Switching Industrial Use· Complement to KSD560 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Darlington TransistorAbsolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 100 V VCEO Collector-Emitter Voltage - 100 V VEBO Emitter-Base Voltage - 7 V IC Collector Current (DC) - 5 A ICP *Collector Current (Pulse) - 8 A IB Base Current - 0.5 A PC Collector Dissipation (Ta=25°C) 1.5 W PC Collector Dissipation (TC=25°C) 30 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C * PW10ms, Duty Cycle50% ©2000 Fairchild Semiconductor International Rev. A, February 2000

Please click the following link to download the datasheet:

KSB601.pdf Datasheet