Part # 2SC3076 datasheet

Part Manufacturer: Toshiba

Toshiba

Part Description: TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)


Part Details:

2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3303 Industrial Applications High Current Switching Applications Unit: mm DC-DC Converter Applications · Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) · High speed switching time: tstg = 1.0 µs (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 7 V DC IC 5 Collector current A Pulse ICP 8 Base current IB 1 A Ta = 25°C 1.0 Collector power P W dissipation C Tc = 25°C 20 Junction temperature T JEDEC j 150 °C Storage temperature range Tstg -55 to 150 °C JEITA TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC


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2SC3076.pdf Datasheet