Part # FDB52N20 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDB52N20 200V N-Channel MOSF


Part Details:

FDB52N July 2008 20 UniFETTM FDB52N20 200V N 200V N-Channel MOSFET -C Features Description hanne · 52A, 200V, RDS(on) = 0.049 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchild s proprietary, planar stripe, · Low gate charge ( typical 49 nC) DMOS technology. l · Low C M rss ( typical 66 pF) This advanced technology has been especially tailored to mini- OSFE · Fast switching mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and · 100% avalanche tested commutation mode. These devices are well suited for high effi- T · Improved dv/dt capability cient switched mode power supplies and active power factorcorrection. D D G G S S Absolute Maximum Ratings Symbol Parameter FDB52N20 Unit VDSS Drain-Source Voltage 200 V ID Drain Current - Continuous (TC = 25°C) 52 A - Continuous (TC = 100°C) 33 A IDM Drain Current - Pulsed (Note 1)


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FDB52N20.pdf Datasheet