Part # FDG8850NZ datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDG8850NZ Dual N-Channel PowerTrench MOSF

Part Details:

FDG8850NZ Dual N-Channel PowerTrench April 2007 FDG8850NZ tm Dual N-Channel PowerTrench® MOSFET 30V,0.75A,0.4Features General Description Max r This dual N-Channel logic level enhancement mode field effect DS(on) = 0.4 at VGS = 4.5V, ID = 0.75A transistors are produced using Fairchild s proprietary, high cell Max rDS(on) = 0.5 at VGS = 2.7V, ID = 0.67A density, DMOS technology. This very high density process is Very low level gate drive requirements allowing operation especially tailored to minimize on-state resistance. This device in 3V circuits(VGS(th) <1.5V) has been designed especially for low voltage applications as Very small package outline SC70-6 a replacement for bipolar digital transistors and small signal RoHS Compliant MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with differ-ent bias resistor values. ® MO SFE T S2 G2 Q1 S1 D1 D1 G1 G2 D2 G1 Q2 D2 S2 S1 SC70-6 Pin 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±12 V Drain Current -Continuous 0.75 ID

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FDG8850NZ.pdf Datasheet