Part # FDZ4670S datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDZ4670S N-Channel PowerTrench SyncFET TM

Part Details:

FDZ4670S March 2008 N-Channel PowerTrench FDZ4670S tm N-Channel PowerTrench® SyncFET TM 30V, 25A, 2.4mFeatures General Description Max rDS(on) = 2.4m at VGS = 10V, ID = 25A Combining Fairchild s 30V PowerTrench® process with state-of-the-art BGA packaging, the FDZ4670S minimizes both Max rDS(on) = 4.0m at VGS = 4.5V, ID = 19A PCB space and rDS(on). This BGA MOSFET embodies a Ultra-thin package: less than 0.85mm height when mounted to breakthrough in packaging technology which enables the device PCB to combine excellent thermal transfer characteristics, high current handling capacity, ultra-low profile packaging, low gate Outstanding thermal transfer characteristics charge and low rDS(on) incorporating SyncFET technology. This Ultra-low gate charge x rDS(on) product device has the added benefit of an efficient monolithic Schottky body diode to reduce Trr and diode forward voltage. RoHS Compliant ® This MOSFET feature faster switching and lower gate charge Sync than other MOSFETs with comparable rDS(on) specifications resulting in DC/DC power supply designs and POL converters with higher overall efficiency. FET Applications DC - DC Conversion TM POL converters Index slot D G Bottom Top S FLFBGA 3.5X4.0 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V Drain Current -Continuous T I A = 25°C (Note 1a)

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FDZ4670S.pdf Datasheet