Part # FQA28N15 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQA28N15 FQA28N15_F109 150V N-Channel MOSF

Part Details:

FQA28N15 / FQA28N15_F109 August 2007 QFET ® FQA28N15 / FQA28N15_F109150V N-Channel MOSFET Features Description · 33A, 150V, RDS(on) = 0.09 @VGS = 10 V These N-Channel enhancement mode power field effect · Low gate charge ( typical 40 nC) transistors are produced using Fairchild s proprietary, planar · Low Crss ( typical 50pF) stripe, DMOS technology. · Fas t switching This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching 150V N-Channel MOSFET · 100% avalanche tested· Improved dv/dt capability performance, and withstand high energy pulse in the avalanche · 175°C maximum junction temperature rating and commutation mode. These devices are well suited for highefficient switched mode power supplies, active power factorcorrection, electronic lamp ballast based on half bridgetopology. D G TO-3P G D S FQA Series S Absolute Maximum Ratings Symbol Parameter FQA28N15 Units VDSS Drain-Source Voltage 150 V ID Drain Current - Continuous (TC = 25°C) 33 A - Continuous (TC = 100°C) 23.3 A IDM Drain Current - Pulsed (Note 1) 132 A VGSS Gate-Source Voltage ± 25 V EAS Single Pulsed Avalanche Energy (Note 2)

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FQA28N15.pdf Datasheet