Part # 2SA1681 datasheet

Part Manufacturer: Toshiba

Toshiba

Part Description: TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)


Part Details:

2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1736 Power Amplifier Applications Unit: mm Power Switching Applications · Low saturation voltage: VCE (sat) = -0.5 V (max) (IC = -1.5 A) · High speed switching time: tstg = 0.2 µs (typ.) · Small flat package · PC = 1.0 to 2.0 W (mounted on a ceramic substrate) · Complementary to 2SC4541 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -6 V Collector current IC -3 A Base current I PW-MINI B -0.6 A P JEDEC C 500 Collector power dissipation PC mW JEITA SC-62 1000 (Note) TOSHIBA 2-5K1A Junction temperature Tj 150 °C Weight: 0.05 g (typ.) Storage temperature range Tstg -55 to 150 °C Note: Mounted on a ceramic substrate (250 mm2 × 0.8 t) 1 2004-07-07


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2SA1681.pdf Datasheet