Part # FDS3890 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDS3890 80V N-Channel Dual PowerTrench MOSF


Part Details:

FDS3890 February 2001 FDS3890 80V N-Channel Dual PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.7 A, 80 V. R specifically to improve the overall efficiency of DC/DC DS(ON) = 44 m @ VGS = 10 V converters using either synchronous or conventional RDS(ON) = 50 m @ VGS = 6 V switching PWM controllers. · Fast switching speed These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R specifications. The result is a MOSFET that is · High performance trench technology for extremely DS(ON) easy and safer to drive (even at very high frequencies), low RDS(ON) and DC/DC power supply designs with higher overall efficiency. · High power and current handling capability D1 D1 5 4 D2 6 Q1 3 D2 7 2 G1 Q2 SO-8 S1 8 1 G2 S2 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 80


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FDS3890.pdf Datasheet