Part # HUF75309D3S datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: HUF75309P3, HUF75309D3, HUF75309D3S 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs

Part Details:

HUF75309P3, HUF75309D3, HUF75309D3S Data Sheet December 2001 19A, 55V, 0.070 Ohm, N-Channel UltraFET Features Power MOSFETs · 19A, 55V These N-Channel power MOSFETs · Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABERTM innovative UltraFET® process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models achieves the lowest possible on-resistance per silicon area, Available on the WEB at: resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the · Peak Current vs Pulse Width Curve diode exhibits very low reverse recovery time and stored · UIS Rating Curve charge. It was designed for use in applications where power efficiency is important, such as switching regulators, · Related Literature switching converters, motor drivers, relay drivers, low- - TB334, "Guidelines for Soldering Surface Mount voltage bus switches, and power management in portable Components to PC Boards" and battery-operated products. Symbol Formerly developmental type TA75309. D Ordering Information PART NUMBER PACKAGE BRAND G HUF75309P3 TO-220AB 75309P HUF75309D3 TO-251AA 75309D S HUF75309D3S TO-252AA 75309D NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-252AA variant in tape and reel, e.g., HUF75309D3ST. Packaging JEDEC STYLE TO-220AB JEDEC TO-251AA SOURCE SOURCE DRAIN DRAIN DRAIN

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HUF75309D3S.pdf Datasheet