Part # NZT660 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: NZT660 NZT660A PNP Low Saturation Transistor


Part Details:

NZT April 2005 660/NZT66 NZT660/NZT660A 0 PNP Low Saturation Transistor A P · These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. NP Low S 4 aturation T 3 2 1 SOT-223 1. Base 2. Collector 3. Emitter rans i Absolute Maximum Ratings* T stor a=25°C unless otherwise noted Symbol Parameter NZT660 NZT660A Units VCEO Collector-Emitter Voltage 60 60 V VCBO Collector-Base Voltage 80 60 V VEBO Emitter-Base Voltage 5 5 V IC Collector Current - Continuous 3 3 A TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ +150 - 55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES: 1) These ratings are based on a maximum junction temperature of 150°C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta = 25°C unless otherwise noted Symbol


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NZT660.pdf Datasheet