Part # FDS8670 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDS8670 30V N-Channel PowerTrench® MOSF


Part Details:

FDS86 January 2008 FDS8670 70 3 tm 0 30V N-Channel PowerTrench® MOSFET V N-Chan General Description Features This device has been designed specifically to improve · 21 A, 30 V Max R the efficiency of DC-DC converters. Using new DS(ON) = 3.7 m @ VGS = 10 V nel PowerTrench techniques in MOSFET construction, the various Max RDS(ON) = 5.0 m @ VGS = 4.5 V components of gate charge and capacitance have been · High performance trench technology for extremely low optimized to reduce switching losses. Low gate R resistance and very low Miller charge enable excellent DS(ON) and gate charge performance with both adaptive and fixed dead time · Minimal Qgd (5.5 nC typical) gate drive circuits. Very low Rds(on) has been · 100% RG tested (0.9 typical) maintained to provide an extremely versatile device. · 100% UIL tested Applications · RoHS Compliant ® · High Efficiency DC-DC Converters: MOSFET · Notebook Vcore Power Supply · Telecom Brick Synchronous Rectifier · Multi purpose Point Of Load D D D 5 4 D 6


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FDS8670.pdf Datasheet