Part # FDI33N25 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description:

Part Details:

FDB May 2006 33N UniFET TM 25 / FDB33N25 / FDI33N25 FD 250V N-Channel MOSFET I33N 25 Features Description · 33A, 250V, RDS(on) = 0.094 @VGS = 10 V These N-Channel enhancement mode power field effect 250V N-Ch · Low gate charge ( typical 36.8 nC) transistors are produced using Fairchild s proprietary, planar · Low C stripe, DMOS technology. rss ( typical 39 pF) · Fas t switching This advanced technology has been especially tailored to · 100% avalanche tested minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche · Improved dv/dt capability annel MOSFET and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D D G G S D2-PAK I2-PAK FDB Series G D S FDI Series S Absolute Maximum Ratings Symbol Parameter FDB33N25 / FDI33N25 Unit VDSS Drain-Source Voltage 250 V ID Drain Current - Continuous (TC = 25°C) 33 A - Continuous (TC = 100°C) 20.4 A IDM

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FDI33N25.pdf Datasheet