Part # FQD13N06 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQD13N06 FQU13N06 60V N-Channel MOSF

Part Details:

FQD13N06 May 2001 QFETTM / FQD13N06 / FQU13N06 FQU13 60V N-Channel MOSFET General Description Features N06 These N-Channel enhancement mode power field effect · 10A, 60V, RDS(on) = 0.14 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. · Low Crss ( typical 15 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for low voltage applications such as DC/DCconverters, high efficiency switching for powermanagement in portable and battery operated products. D D ! " ! " G ! " ! " D-PAK I-PAK G S FQD Series G D S FQU Series ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQD13N06 / FQU13N06 Units VDSS Drain-Source Voltage 60 V ID Drain Current - Continuous (TC = 25°C) 10 A - Continuous (TC = 100°C)

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FQD13N06.pdf Datasheet