Part # FCI11N60 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FCI11N60 600V N-Channel MOSF

Part Details:

FCI1 July 2005 1N60 SuperFETTM 6 FCI11N60 00V 600V N-Channel MOSFET N-C Features Description hannel · 650V @TJ = 150°C SuperFETTM is, Farichild s proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge · Typ . RDS(on) = 0.32 balance mechanism for outstanding low on-resistance and M · Ultra Low Gate Charge (typ. Qg = 40nC) lower gate charge performance. O · Low Effective Output Capacitance (typ. C This advanced technology has been tailored to minimize con- SFET osseff. = 95pF) duction loss, provide superior switching performance, and with- · 100% Avalanche Tested stand extreme dv/dt rate and higher avalanche energy.Consequently, SuperFET is very suitable for various AC/DCpower conversion in switching mode operation for system min-iaturization and higher efficiency. D G G D S S Absolute Maximum Ratings Symbol Parameter FCI11N60 Unit VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) 11 A - Continuous (TC = 100°C) 7 A IDM Drain Current - Pulsed (Note 1) 33 A VGSS

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FCI11N60.pdf Datasheet