Part # FDN336P datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDN336P Single P-Channel 2.5V Specified PowerTrench® MOSF


Part Details:

FDN336P January 2005 FDN336P Single P-Channel 2.5V Specified PowerTrench® MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced · ­1.3 A, ­20 V. R using Fairchild Semiconductor s advanced DS(ON) = 0.20 @ VGS = ­4.5 V PowerTrench process that has been especially tailored RDS(ON) = 0.27 @ VGS = ­2.5 V to minimize the on-state resistance and yet maintain · Low gate charge (3.6 nC typical) low gate charge for superior switching performance. · High performance trench technology for extremely These devices are well suited for portable electronics low R applications: load switching and power management, DS(ON) battery charging circuits and DC/DC conversion. · SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint D D S G S G SuperSOT -3 TM Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage ­20 V VGSS Gate-Source Voltage ±8 V ID Drain Current ­ Continuous (Note 1a) ­1.3 A ­


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FDN336P.pdf Datasheet