Part # FDC637BNZ datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDC637BNZ N-Channel 2.5V Specified PowerTrench MOSF

Part Details:

FDC637BNZ N- September 2007 FDC637BNZ tm N-Channel 2.5V Specified PowerTrench® MOSFET Channel 2. 20V, 6.2A, 24mFeatures General Description Max rDS(on) = 24m at VGS = 4.5V, ID = 6.2A This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench® process 5V Specif Max rDS(on) = 32m at VGS = 2.5V, ID = 5.2A that has been especially tailored to minimize the on-state Fast switching speed resistance and yet maintain low gate charge for superior switching performance. Low gate charge (8nC typical) These devices have been designed to offer exceptional power High performance trench technology for extremely low rDS(on) dissipation in a very small footprint compared with bigger SO-8 ied Pow SuperSOTTM­6 package: small footprint (72% smaller than and TSSOP-8 packages. standard SO-8; low profile (1mm thick) HBM ESD protection level > 2kV typical (Note 3) Applications e Manufactured using green packaging material DC - DC Conversion rT Halide-Free Load switch rench RoHS Compliant Battery Protection ® MOSFET S D D 1 6 D D D 2 5 D G D G 3 4 S Pin 1 D SuperSOTTM -6 MOSFET Maximum Ratings TA= 25°C unless otherwise noted

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FDC637BNZ.pdf Datasheet