Part # FDG329N datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDG329N 20V N-Channel PowerTrench MOSF


Part Details:

FDG329N October 2001 FDG329N20V N-Channel PowerTrench® MOSFET General Description Features This N-Channel MOSFET has been designed · 1.5 A, 20 V. RDS(ON) = 90 m @ VGS = 4.5 V. specifically to improve the overall efficiency of DC/DCconverters using either synchronous or conventional RDS(ON) = 115 m @ VGS = 2.5 V switching PWM controllers. It has been optimized usein small switching regulators, providing an extremely · Fast switching speed low RDS(ON) and gate charge (QG) in a small package. · Low gate charge (3.3 nC typical) Applications · High performance trench technology for extremely · DC/DC converter low RDS(ON) · Power management· Load switch · High power and current handling capability. S D 1 6 D 2 5 G D Pin 1 3 4 SC70-6 D Absolute Maximum Ratings TA=25oC unless otherwise notedSymbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ± 12 V ID Drain Current ­ Continuous (Note 1a) 1.5 A ­ Pulsed 6


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FDG329N.pdf Datasheet