Part # FDS8928A datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor

Part Details:

July 1998 FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power N-Channel 5.5 A,30 V, R =0.030 @ V =4.5 V field effect transistors are produced using Fairchild s DS(ON) GS proprietary, high cell density, DMOS technology. This very R =0.038 @ V =2.5 V. DS(ON) GS high density process is especially tailored to minimize P-Channel -4 A,-20 V, R =0.055 @ V =-4.5 V DS(ON) GS on-state resistance and provide superior switching R =0.072 @ V =-2.5 V. DS(ON) GS performance. These devices are particularly suited for lowvoltage applications such as notebook computer power High density cell design for extremely low R . DS(ON) management and other battery powered circuits where fast High power and current handling capability in a widely used switching, low in-line power loss, and resistance to surface mount package. transients are needed. Dual (N & P-Channel) MOSFET in surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 4 D2 5 D1 FDS D1 6 3 8928A 7 2

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FDS8928A.pdf Datasheet