Part # KSB1116S datasheet

Part Manufacturer: Motorola


Part Description: KSB1116S PNP Epitaxial Silicon Transistor

Part Details:

KSB111 6S KSB1116S Audio Frequency Power Amplifier & Medium Speed Switching TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current (DC) -1 A ICP * Collector Current (Pulse) -2 A PC Collector Power Dissipation 0.75 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C * PW10ms, Duty Cycle50% Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current

Please click the following link to download the datasheet:

KSB1116S.pdf Datasheet