Part # FDN327N datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDN327N N-Channel 1.8 Vgs Specified PowerTrench MOSF


Part Details:

FDN327N October 2001 FDN327NN-Channel 1.8 Vgs Specified PowerTrench® MOSFET General Description Features This 20V N-Channel MOSFET uses Fairchild s high · 2 A, 20 V. RDS(ON) = 70 m @ VGS = 4.5 V voltage PowerTrench process. It has been optimized forpower management applications. RDS(ON) = 80 m @ VGS = 2.5 V RDS(ON) = 120 m @ VGS = 1.8 V Applications · Low gate charge (4.5 nC typical) · Load switch· Battery protection · Fast switching speed · Power management · High performance trench technology for extremely low RDS(ON) D D S G S G SuperSOT -3 TM Absolute Maximum Ratings TA=25oC unless otherwise notedSymbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ± 8 V ID Drain Current ­ Continuous (Note 1a) 2 A ­ Pulsed 8 PD Power Dissipation for Single Operation (Note 1a) 0.5 W (Note 1b) 0.46 TJ, TSTG


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FDN327N.pdf Datasheet