Part # 2SA1987 datasheet

Part Manufacturer: Toshiba


Part Description: TOSHIBA Transistor Silicon PNP Triple Diffused Type

Part Details:

2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm · High breakdown voltage: VCEO = -230 V (min) · Complementary to 2SC5359 · Recommended for 100-W high-fidelity audio frequency amplifier output stage. Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -230 V Collector-emitter voltage VCEO -230 V Emitter-base voltage VEBO -5 V Collector current IC -15 A Base current IB -1.5 A Collector power dissipation P C 180 W (Tc = 25°C) JEDEC Junction temperature Tj 150 °C JEITA Storage temperature range Tstg -55 to 150 °C TOSHIBA 2-21F1A Electrical Characteristics (Tc = 25°C) Weight: 9.75 g (typ.) Characteristics Symbol Test Condition Min Typ. Max Unit

Please click the following link to download the datasheet:

2SA1987.pdf Datasheet