Part # HUF75344A3 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: HUF75344A3 N-Channel UltraFET Power MOSF

Part Details:

HUF75344A3 N-Channel Ul October 2007 HUF75344A3 tm N-Channel UltraFET Power MOSFET55V, 75A, 8m Features Description · RDS(on) = 6.5m ( Typ.)@ VGS = 10V, ID = 75A · This N-channel power MOSFET is produced using Fairchild Semiconductor s innovative UItraFET process. This advanced · RoHS compliant process technology achieves the lowest possibleon-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high traFET Power M energy in the avalanche mode and the diode exhibits very lowreverse recovery time and stored change. It was designed foruse in applications where power efficiency is important, suchas switching regulators, switching converters, motro drives,relay drivers, low-voltage bus switches, and power manage-ment in portable and battery-operated products. O D SFET G TO-3PN G D S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 55 V VGSS Gate to Source Voltage ±20 V ID Drain Current -Continuous (TC = 130oC) 75 A IDM Drain Current - Pulsed 300 A EAS Single Pulsed Avalanche Energy (Note 1) 1153 mJ (T P C = 25oC) 288.5 W

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HUF75344A3.pdf Datasheet