Part # STL20NM20N datasheet

Part Manufacturer: ST Microelectronics

ST Microelectronics

Part Description: N-CHANNEL 200V 0.11 OHM 20A POWERFLAT ULTRA LOW GATE CHARGE MDMESH II MOSF


Part Details:

STL20NM20N N-CHANNEL 200V - 0.088 - 20A PowerFLATTM ULTRA LOW GATE CHARGE MDmeshTM II MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID STL20NM20N 200 V < 0.105 20 A WORLDWIDE LOWEST GATE CHARGE TYPICAL RDS(on) = 0.088 IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE (1mm MAX) VERY LOW THERMAL RESISTANCE LOW GATE RESISTANCE PowerFlat (6x5) LOW INPUT CAPACITANCE (Chip Scale Package) HIGH dv/dt and AVALANCHE CAPABILITIES DESCRIPTIONThis 200V MOSFET with a new advanced layout brings all unique advantages of MDmesh technol-ogy to lower voltages. The device exhibits world- Figure 2: Internal Schematic Diagram wide lowest gate charge for any given on-resistance.Its use is therefore ideal as primary switch in isolated DC-DC converters for Telecom and Computer applications.Used in combination with secondary-side low-voltage STripFETTM prod-ucts, it contributes to reducing losses and boosting efficiency.The new PowerFLATTM package allows a significant reduction in board space without com-promising performance. APPLICATIONSThe MDmeshTM family is very suitable for increas-ing power density allowing system miniaturization and higher efficiencies Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STL20NM20N L20NM20N PowerFLATTM(6x5) TAPE & REEL Rev. 6 January 2006 1/10 STL20NM20N Table 3: Absolute Maximum ratings Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 200 V VDGR Drain-gate Voltage (RGS = 20 k) 200 V


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STL20NM20N.pdf Datasheet