Part # IRFP460C datasheet

Part Manufacturer: Motorola


Part Description: RFP460C 500V N-Channel MOSF

Part Details:

IRF February 2002 P460C IRFP460C500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 20A, 500V, RDS(on) = 0.24 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 130nC) planar stripe, DMOS technology. · Low Crss ( typical 60 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supplies andpower factor corrections. D! G ! TO-3P G D S IRFP Series ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter IRFP460C Units VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25°C) 20 A - Continuous (TC = 100°C) 12.5 A IDM Drain Current - Pulsed (Note 1) 80 A VGSS

Please click the following link to download the datasheet:

IRFP460C.pdf Datasheet