Part # FQA24N50F datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQA24N50F 500V N-Channel MOSF

Part Details:

FQA24N50 September 2001 FRFETTM F FQA24N50F500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 24A, 500V, RDS(on) = 0.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 90 nC) planar stripe, DMOS technology. · Low Crss ( typical 55 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are well · Fast recovery body diode ( max, 250ns ) suited for high efficiency switch mode power supplies,where the body diode is used such as phase-shift ZVS,basic full-bridge topology. D ! " ! " G ! " ! " TO-3P ! G D S FQA Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQA24N50F Units VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25°C) 24 A - Continuous (TC = 100°C) 15.2 A IDM Drain Current - Pulsed (Note 1)

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FQA24N50F.pdf Datasheet