Part # 2N5769 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: 2N5769 NPN Switching Transistor

Part Details:

2N5769 Discrete POWER & Signal Technologies 2N5769 C TO-92 B E NPN Switching Transistor This device is designed for high speed saturated switchingapplications at currents to 100 mA. Sourced from Process 21.See PN2369A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Col ector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.5 V IC Col ector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N5769 PD Total Device Dissipation 350 mW Derate above 25°C 2.8 mW/°C RJC Thermal Resistance, Junction to Case 125 °C/W RJA Thermal Resistance, Junction to Ambient

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2N5769.pdf Datasheet