Part # FDJ128N datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDJ128N N-Channel 2.5 Vgs Specified PowerTrench MOSF

Part Details:

FDJ128N August 2004 FDJ128N N-Channel 2.5 Vgs Specified PowerTrench MOSFET General Description Features This N-Channel -2.5V specified MOSFET uses · 5.5 A, 20 V. R Fairchild s advanced low voltage PowerTrench process. DS(ON) = 35 m @ VGS = 4.5 V It has been optimized for battery power management RDS(ON) = 51 m @ VGS = 2.5 V applications. Applications · Low gate charge · Battery management · High performance trench technology for extremely low RDS(ON) · Compact industry standard SC75-6 surface mount package G S S S S S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ± 12 V ID Drain Current ­ Continuous (Note 1a) 5.5 A ­ Pulsed 16 PD Power Dissipation for Single Operation

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FDJ128N.pdf Datasheet