Part # FJX1182 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FJX1182 PNP Epitaxial Silicon Transistor

Part Details:

FJX1 182 FJX1182 Low Frequency Power Amplifier 3 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA PC Collector Power Dissipation 150 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB= -35, IE=0 -0.1 µA IEBO

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FJX1182.pdf Datasheet