Part # FDC638APZ datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDC638APZ P-Channel 2.5V PowerTrench&#174 Specified MOSF


Part Details:

FDC638APZ P-Channel 2.5V PowerTrench December 2006 FDC638APZ P-Channel 2.5V PowerTrench® Specified MOSFET ­20V, ­4.5A, 43mFeatures General Description Max rDS(on) = 43m at VGS = ­4.5V, ID = ­4.5A This P-Channel 2.5V specified MOSFET is produced using Max r Fairchild Semiconductor s advanced PowerTrench® process DS(on) = 68m at VGS = ­2.5V, ID = ­3.8A that has been especially tailored to minimize the on-state Low gate charge (8nC typical). resistance and yet maintain low gate charge for superior High performance trench technology for extremely low r switching performance DS(on). SuperSOTTM ­6 package:small footprint (72% smaller than These devices are well suited for battery power applications:load standard SO­8) low profile (1mm thick). switching and power management,battery charging circuits,and DC/DC conversion. RoHS Compliant Application ® DC - DC Conversion Spe cifie d MOS S D D 1 6 D D FET D 2 5 D G D G S Pin 1 D 33 4 SuperSOTTM -6 MOSFET Maximum Ratings TA= 25°C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage ­20


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FDC638APZ.pdf Datasheet