Part # FDN359BN datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDN359BN N-Channel Logic Level PowerTrench• MOSF


Part Details:

FDN359BN January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET General Description Features · 2.7 A, 30 V. RDS(ON)= 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced using Fairchild s Semiconductor s advanced RDS(ON)= 0.060 @ VGS = 4.5 V PowerTrench process that has been especially tailored · to minimize on-state resistance and yet maintain Very fast switching speed. superior switching performance. · Low gate charge (5nC typical) These devices are well suited for low voltage and · High performance version of industry standard battery powered applications where low in-line power SOT-23 package. Identical pin out to SOT-23 with 30% loss and fast switching are required. higher power handling capability. D D S G S G SuperSOT -3 TM Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Maximum Drain Current ­ Continuous (Note 1a) 2.7 A ­ Pulsed 15


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FDN359BN.pdf Datasheet