Part # 2SC5562 datasheet

Part Manufacturer: Toshiba


Part Description: TOSHIBA Transistor Silicon NPN Triple Diffused Type

Part Details:

2SC5684 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5684 Switching Regulator and High-Voltage Switching Applications Unit: mm · Excellent switching times (IC = 0.3 A) : tr = 0.7 µs (max), tf = 0.5 µs (max) · High collector breakdown voltage: VCEO = 800 V · High-speed DC-DC converter applications Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 900 V Collector-emitter voltage VCEO 800 V Emitter-base voltage VEBO 7 V DC IC 0.8 Collector current A Pulse ICP 1.5 JEDEC Base current IB 0.4 A JEITA Collector power dissipation PC 1.8 W Junction temperature T TOSHIBA 2-10T1A j 150 °C Storage temperature range T Weight: 1.5 g (typ.) stg -55 to 150 °C Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ.

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2SC5562.pdf Datasheet