Part # FQAF17P10 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQAF17P10 100V P-Channel MOSF

Part Details:

FQAF17P1 QFETTM 0 FQAF17P10100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect · -12.4A, -100V, RDS(on) = 0.19 @VGS = -10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 30 nC) planar stripe, DMOS technology. · Low Crss ( typical 100 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are well · 175°C maximum junction temperature rating suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontrol. D G TO-3PF G D S FQAF Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQAF17P10 Units VDSS Drain-Source Voltage -100 V ID Drain Current - Continuous (TC = 25°C) -12.4 A - Continuous (TC = 100°C) -8.8 A IDM Drain Current - Pulsed (Note 1) -49.6 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy

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FQAF17P10.pdf Datasheet