Part # FDC608PZ datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDC608PZ P-Channel 2.5V Specified PowerTrench® MOSF


Part Details:

FDC608PZ June 2006 FDC608PZ tm P-Channel 2.5V Specified PowerTrench® MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced · ­5.8 A, ­20 V. R using Fairchild Semiconductor s advanced DS(ON) = 30 m @ VGS = ­4.5 V PowerTrench process that has been especially tailored RDS(ON) = 43 m @ VGS = ­2.5 V to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. · Low Gate Charge These devices are well suited for battery power · High performance trench technology for extremely applications: load switching and power management, low RDS(ON) battery power circuits, and DC/DC conversions. · SuperSOT TM ­6 package: small footprint (72% smaller than standard SO­8) low profile (1mm thick). S D D 1 6 2 5 G D 3 4 TM D SuperSOT -6 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage ­20 V VGSS Gate-Source Voltage ±12 V


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FDC608PZ.pdf Datasheet