Part # BC807 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: BC807 BC808 PNP Epitaxial Silicon Transistor


Part Details:

BC807/ BC808 BC807/BC808 Switching and Amplifier Applications· Suitable for AF-Driver stages and low power output stages 3 · Complement to BC817/BC818 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage : BC807 -50 V : BC808 -30 V VCEO Collector-Emitter Voltage : BC807 -45 V : BC808 -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -800 mA PC Collector Power Dissipation -310 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition


Please click the following link to download the datasheet:

BC807.pdf Datasheet