Part # 2SC3672 datasheet

Part Manufacturer: Toshiba


Part Description: TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)

Part Details:

2SC3672 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC3672 High-Voltage Control Applications Unit: mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications · High breakdown voltage: VCBO = 300 V, VCEO = 300 V · Low saturation voltage: VCE (sat) = 0.5 V (max) · Small collector output capacitance: Cob = 3 pF (typ.) · Complementary to 2SA1432. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 300 V Collector-emitter voltage VCEO 300 V Emitter-base voltage VEBO 6 V Collector current IC 100 mA JEDEC Base current IB 20 mA JEITA Collector power dissipation PC 1000 mW TOSHIBA 2-7D101A Junction temperature Tj 150 °C Weight: 0.2 g (typ.) Storage temperature range Tstg -55 to 150 °C Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Col ector cut-off current ICBO VCB = 300 V, IE = 0 0.1 µA Emitter cut-off current IEBO

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2SC3672.pdf Datasheet