Part # FCPF11N60T datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FCP11N60 FCPF11N60 SuperFETTM


Part Details:

FCP11N60 SuperFETTM /FCPF11N60 FCP11N60/FCPF11N60 General Description Features SuperFETTM is a new generation of high voltage MOSFETs · 650V @Tj = 150°C from Fairchild with outstanding low on-resistance and low · Typ. Rds(on)=0.32 gate charge performance, a result of proprietary technology · Ultra low gate charge (typ. Qg=40nC) utilizing advanced charge balance mechanisms. · Low effective output capacitance (typ. Coss.eff=95pF) This advanced technology has been tailored to minimize · 100% avalanche tested conduction loss, provide superior switching performance,and withstand extreme dv/dt rate and higher avalancheenergy. Consequently, SuperFET is very suitable forvarious AC/DC power conversion in switching modeoperation for system miniaturization and higher efficiency. D ! G! TO-220 TO-220F G D S G D S FCP Series FCPF Series ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FCP11N60 FCPF11N60 Units ID Drain Current - Continuous (TC = 25°C) 11 11* A - Continuous (TC = 100°C) 7 7* A IDM Drain Current - Pulsed (Note 1) 33 33* A


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FCPF11N60T.pdf Datasheet