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Part Manufacturer: Fairchild Semiconductor

Part Description: FDN361AN N-Channel Logic Level PowerTrench

Part Details:

FDN361AN April 1999 FDN361ANN-Channel, Logic Level, PowerTrench General Description Features This N-Channel Logic Level MOSFET is produced using · 1.8 A, 30 V. R = 0.100 @ V = 10 V DS(on) GS Fairchild Semiconductor s PowerTrench process that has R = 0.150 @ V = 4.5 V. been especially tailored to minimize the on-state resistance DS(on) GS and yet maintain low gate charge for superior switching · Low gate charge ( 2.1nC typical ). performance. · Fast switching speed. · High performance trench technology for extremely Applications low R . DS(on) · DC/DC converter · High power version of industry standard SOT-23 · Load switch package. Identical pin out to SOT-23 with · Motor drives 30% higher power handling capability. D D S G S TM G SuperSOT -3 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter FDN361AN Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage - Continuous ±20 V ID Drain Current - Continuous

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FDN361AN.pdf Datasheet