Part # 2N5950 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: 2N5950 N-Channel RF Amplifier


Part Details:

2N5 950 -- N-Cha September 2007 2N5950N-Channel RF Amplifier nnel RF · This device is designed primarily for electronic switching applications such as low on resistance analog switching.· Sourced from process 50. Amplifier TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Current 10 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 °C * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES:1) These rating are based on a maximum junction temperature of 150 degrees C.2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Ta=25°C unless otherwise noted Symbol Parameter Max. Units PD Total Device Dissipation 350 mW Derate above 25°C 2.8 mW/°C RJC Thermal Resistance, Junction to Case 125 °C/W RJA Thermal Resistance, Junction to Ambient 357 °C/W © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com


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2N5950.pdf Datasheet