Part # FQB7N65C datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQB7N65C 650V N-Channel MOSF

Part Details:

FQB7N65C 650V N-Channel MOSFET September 2006 QFET ® FQB7N65C650V N-Channel MOSFET Features Description · 7A, 650V, RDS(on) = 1.4 @VGS = 10 V These N-Channel enhancement mode power field effect · Low gate charge ( typical 28 nC) transistors are produced using Fairchild s proprietary, planar · Low Crss ( typical 12 pF) stripe, DMOS technology. · Fas t switching This advanced technology has been especially tailored to · 100% avalanche tested minimize on-state resistance, provide superior switching · Improved dv/dt capability performance, and withstand high energy pulse in the avalancheand commutation mode. These devices are well suited for highefficient switched mode power supplies, active power factorcorrection, electronic lamp ballast based on half bridgetopology. D D G G S D2-PAKFQB Series S Absolute Maximum Ratings Symbol Parameter FQB7N65C Units VDSS Drain-Source Voltage 650 V ID Drain Current - Continuous (TC = 25°C) 7 A - Continuous (TC = 100°C) 4.45 A IDM Drain Current - Pulsed (Note 1) 28 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2)

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FQB7N65C.pdf Datasheet