Part # FQA62N25C datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQA62N25C 250V N-Channel MOSF


Part Details:

FQA62N25C QFET® FQA62N25C250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 62A, 250V, RDS(on) = 0.035 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 100 nC) planar, DMOS technology. · Low Crss ( typical 63.5 pF) This advanced technology has been especially tailored to · Fas t switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for high efficiency switching DC/DC converters andswitch mode power supplies. D G TO-3P S G D S FQA Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQA62N25C Units VDSS Drain-Source Voltage 250 V ID Drain Current - Continuous (TC = 25°C) 62 A - Continuous (TC = 100°C) 39 A IDM Drain Current - Pulsed (Note 1) 248 A VGSS Gate-Source Voltage ± 30


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FQA62N25C.pdf Datasheet