Part # KSB1017 datasheet

Part Manufacturer: Motorola


Part Description: KSB1017 PNP Silicon Epitaxial Transistor

Part Details:

KSB101 7 KSB1017 Power Amplifier Applications· Complement to KSD1408 1 TO-220F 1.Base 2.Collector 3.Emitter PNP Silicon Epitaxial TransistorAbsolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 80 V VCEO Collector-Emitter Voltage - 80 V VEBO Emitter-Base Voltage - 5 V IC Collector Current - 4 A IB Base Current - 0.4 A PC Collector Dissipation ( TC=25°C) 25 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = - 50mA, IB = 0

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KSB1017.pdf Datasheet