Part # FQB34N20L datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQB34N20L FQI34N20L 200V LOGIC N-Channel MOSF


Part Details:

June 2000 4N20L QFETTM FQB34N20L / FQI34N20L200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 31A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 55 nC) FQB34N20L / FQI3 planar stripe, DMOS technology. · Low Crss ( typical 52 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are well · Low level gate drive requirement allowing direct suited for high efficiency switching DC/DC converters, opration from logic drivers switch mode power supply, motor control. D D ! " ! " G ! " ! " G S D2-PAK I2-PAK G D S ! FQB Series FQI Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQB34N20L / FQI34N20L Units VDSS Drain-Source Voltage 200 V ID Drain Current - Continuous (TC = 25°C) 31


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FQB34N20L.pdf Datasheet