Part # 2N5551 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: MMBT5551 Rev B.fm


Part Details:

2N5551- MMBT April 2006 2N5551- MMBT5551 tm 5551 NPN Ge NPN General Purpose Amplifier Features· This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. · Suffix "-C" means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) · Suffix "-Y" means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V) neral Purpos 2N5551 MMBT5551 3 e Amplifier 2 TO-92 1 SOT-23 Marking: 3S 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 160 V VCBO Collector-Base Voltage 180 V VEBO Emitter-Base Voltage 6.0 V IC Collector current - Continuous 600 mA TJ, Tstg Junction and Storage Temperature -55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1. These ratings are based on a maximum junction temperature of 150 degrees C.2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Ta=25°C unless otherwise noted Max Symbol Parameter Units 2N5551 *MMBT5551 PD Total Device Dissipation 625


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2N5551.pdf Datasheet