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Part Manufacturer: Toshiba

Part Description: TOSHIBA Transistor Silicon NPN Epitaxial Type

Part Details:

2SC5784 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5784 High-Speed Switching Applications Unit: mm DC-DC Converter Applications · High DC current gain: hFE = 400 to 1000 (IC = 0.15 A) · Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) · High-speed switching: tf = 45 ns (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEX 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 7 V DC IC 1.5 Collector current A Pulse ICP 2.5 Base current IB 150 mA JEDEC t = 10 s PC 750 Collector power mW JEITA dissipation DC (Note 1) 500 TOSHIBA 2-3S1A Junction temperature Tj 150 °C Weight: 0.01 g (typ.) Storage temperature range Tstg -55 to 150

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